Bahram Roughani, Ph.D. Professor of Applied Physics, Physics Program Director Research Area: Materials Science Office: 2-320 AB Phone: (810) 762-7499 Email: broughan@kettering.edu Personal Web Page

• Ph.D. in Physics (1988) from the University of Cincinnatti
• M.S. in Physics (1983) from the University of Cincinnatti
• M.A. (1981) from Indiana State University
• B.S. in Physics (1979) from Indiana State University

Recent Publications:

• B. Roughani, U. Ramabadran, D. Phillips, W.C. Mitchel, and C.L. Neslen, "Chem-Mechanical Polishing and Rapid Thermal Annealing of SiC: Raman Spectroscopy and ESCA (XPS) Studies", Mat. Res. Soc. Symp., 640, H5-40 (2001)
• W.C. Mitchel, J. Brown, K. Malalingham, F.D. Orazio,Jr., P. Pirouz, H.J. R. Tseng, U. Ramabadran, and B. Roughani, "Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering", Conference Proceedings; International Conference on SiC and Related Materials; 1999, in press (2000).
• D.N. Talwar, B. Roughani, P. Amirtharaj, J. Pellegrino, and S.B. Qadri, "Study of Phonons in Semiconductor Superlattices by Raman Scattering and Microscopic Model Calculation", J. Mater. Sci. and Eng. B44, 143 (1997).
• J.G. Pellegrino, C.A. Richter, J.A. Dura, P.M. Amertharaj, S.B. Qadri, and B. Roughani, "Buffer layer- modulation-doped field-effect-transistor interactions in A_0.33l Ga_0.67 As/GaAs supperlattice system", J. Vac. Sci. Technol.A , 787 (1995).
• Bahram Roughani, Howard E. Jackson, "Raman Scattering Investigation of Si-Doped GaAs Surfaces", Proceeding of the Iranian Conference on Electrical Engineering, ICEE 94, 29 (1994)